Based on the advanced and innovative properties of wide bandgap materials, ST’s 650 and 1700 V silicon-carbide (SiC) MOSFETs feature very low on-state resistance (R DS(on)) per area combined with excellent switching performance, translating into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance per area even at high temperatures as well as excellent switching performance versus the best-in-class IGBTs in all temperature ranges, simplifying the thermal design of power electronic systems. The main features and benefits of our SiC MOSFETs include: • Very high temperature handling capability (max.
1700v Sic Mosfet
Drive circuit for SiC power MOSFET by GaN HEMT. Postcard template 4 per page. Section 2 describes the constitution of a proposed gate drive circuit and the characteristics of applied GaN HEMTs. 62EM1 Gate Drivers for SiC MOSFET modules in 62mm packages. The AgileSwitch 62EM1-62mm Electrical driver provides monitoring and fault reporting information to enable better control and analysis of an SiC MOSFET-based power systems. The 62EM1 provides up to 20 Amps of peak current at an operating frequency up to 125 kHz. Select the right Silicon Carbide gate driver for your next energy-efficient, robust and compact system design High Efficiency Boost the efficiency of your design with strong drive currents, high CMTI and short propagation delays of our SiC gate drivers. Overview Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs. Next Generation SiC MOSFET Features.
T J = 200 °C) leading to reduced PCB form factors (simplified thermal management) as well as improved system reliability • Significantly reduced switching losses (minimal variation versus temperature) resulting in more compact designs (with smaller passive components) • Low on-state resistance (20 mΩ typ. @ 25 °C for 650 V devices and 80 mΩ typ.
High Side Mosfet Driver
Ia writer for mac. @ 25 °C for 1200 V devices) resulting in higher system efficiency thanks to reduced cooling requirements • Simple to drive (cost-effective network driving) • Very fast and robust intrinsic body diode (no need for external freewheeling diode, thus more compact systems) Our portfolio includes a wide range of operating voltages for Industrial and Automotive applications such as traction inverters, on board chargers & fast chargers, DC-DC converters, SMPS/high-end PFCs, auxiliary power supplies, and UPS/Solar/Welding. New 650 V, 22 mΩ typ (at 150 °C) SiC power MOSFET ST has extended its portfolio of SiC MOSFETs with the introduction of the 22 mΩ typ (at 150 °C), 650 V which increases the electrical efficiency of EVs and hybrid vehicles. When used in the EV/HEV main inverter, it increases the efficiency by up to 3% compared with an equivalent IGBT solution, translating into longer battery life and a lighter power unit. /dvr-application-for-mac/.
Dual Mosfet Driver
ST’s SiC MOSFETs also feature the industry’s highest junction-temperature rating of 200°C and show a very small variation of the on-state resistance even at high temperatures. This leads to higher system efficiency, which reduces cooling requirements and PCB form factors simplifying thermal management. The new 650 V SiC MOSFET is currently sampling to lead customers and will soon complete the qualification to AEC-Q101.